Ram Kingston 4gb Ddr4 Kvr2666 (3y)

4GB 1Rx16 512M x 64-Bit PC4-2666 CL19 288-Pin DIMM

• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP = 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 8 internal banks; 2 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.23” (31.25mm)


SPECIFICATIONS

CL(IDD) : 19 cycles

Row Cycle Time (tRCmin) : 45.75ns(min.)

Refresh to Active/Refresh Command Time (tRFCmin) : 350ns(min.)


Row Active Time (tRASmin) : 32ns(min.)

Maximum Operating Power : TBD W*

UL Rating : 94 V - 0

Operating Temperature : 0o C to +85o C

Storage Temperature : -55o C to +100o C